CdTe polycrystalline thin films were grown using a new procedure based on the CSS technique. With an adequate control of the deposition parameters, it was possible to grow CdTe films with grain sizes greater than 45 /spl mu/m. The samples were characterized by XRD, SEM and EDS measurements. The studies revealed that the substrate and sublimation temperatures influence strongly the crystallographic orientation of the films, which grow with a mixed structure of cubic and hexagonal phases. EDS analysis carried out on different samples, showed a significant influence of some deposition parameters on the chemical composition of the CdTe films. The effect of introducing O/sub 2/ during the deposition of the CdTe films, on the resistivity and crystallographic properties is also discussed.