We have prepared Bi2Sr2CaCu2O8−δ/Bi2Sr2YCu2O8−δ/Bi2Sr2CaCu2O8−δ trilayer structures, using an in situ DC‐sputtering process at high oxygen pressures on (001) SrTiO3 substrates. Bi2Sr2CaCu2O8−δ films were used for superconducting electrodes and semiconductor‐like Bi2Sr2YCu2O8−δ films with thicknesses between 5 and 30 nm were used as barrier layers. The composition of the barrier except for Y, as well the structure are compatible with those of the superconducting electrodes which allowed the epitaxial growth of the heterostructure as shown by X‐ray and cross section Transmission Electron Microscopy (TEM) analysis. Gap‐like structures have been observed in the tunneling characteristics of the junctions, flat and linear conductance background as well as a zero‐bias conductance peak, have been observed too.