The influence of the preparation parameters on the chemical and phase composition and crystallographic orientation of CuInSe2 (CIS) thin films deposited by coevaporation of Cu, In and Se were studied by X‐ray diffraction and EDS techniques. From these results, the conditions to grow CuInSe2 films in the chalcopyrite phase were determined. Based in the correlation of EDS analysis with XRD measurements, a procedure to identify the presence of Cu2−xSe in CuInSe2 films is presented in this work.
