On the other hand, it is widely known that reflection high-energy electron diffraction (RHEED) is a powerful in-situ characterization technique, RHEED is quite sensitive to the www.intechopen.comState-of-the-Art of Quantum Dot System Fabrications 102 crystallographic surface structures in real time.Many authors have used this technique to study the QD shape evolution during the GaAs capping layer growth.However, very few authors have studied the relation between diffraction pattern (chevrons) with the shape and size of quantum dots [H. Lee et al, 1998; T. Hanada et al, 2001b].In order to minimize the effects of size and shape fluctuation, the growth parameters such as growth temperature and Arsenic overpressure must be optimized.On the other hand, in a similar way as in GaAsN and GaPN alloys, the incorporation of Nitrogen (N) in InAs, yields a large bandgap bowing which produces a significant reduction of the bandgap energy.Therefore, InAsN SAQDs are promising to obtain emissions at a wavelength of 1.55 μm and longer.In this work we have studied the effects of growth temperature and Arsenic overpressure on the growth mode of InAs(N) SAQDs on GaAs(100) substrates.The wavelength emission of the InAs(N) SAQDs was evaluated depending on growth conditions.We present an analysis of the asymmetric broadening of the Raman spectra using the confinment phonon model (CM).