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Metamaterial-inspired perfect tunnelling in semiconductor heterostructures

Acceso Abierto
ID Minciencias: ART-0001061283-74
Ranking: ART-ART_A1

Abstract:

In this paper we are using formal analogy of electromagnetic wave equation and Schrodinger equation in order to study the phenomenon of perfect tunneling (tunneling with unitary transmittance) in 1D semiconductor heterostructure. Using the Kane model of semiconductor we are showing that such phenomenon can indeed exist, resembling all the interesting features of the analogous phenomenon in classical electromagnetism in which metamaterials (substances with negative material parameters) are involved. We believe that these results can open up the way to interesting applications in which the metamaterial ideas are transfered into semiconductor domain.

Tópico:

Metamaterials and Metasurfaces Applications

Citaciones:

Citations: 22
22

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Información de la Fuente:

SCImago Journal & Country Rank
FuenteNew Journal of Physics
Cuartil año de publicaciónNo disponible
Volumen13
Issue8
Páginas083011 - 083011
pISSNNo disponible
ISSNNo disponible

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